Substrate: Silicon Wafers
Diameter: 150mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 675 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 2000A +/- 5% Stoichiometric LPCVD Nitride
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