Stoichiometric LPCVD Nitride – 1,000Å

Parameters

Film TypeStoichiometric LPCVD Nitride
Film Thickness1,000Å +/- 5%
Lot Size25 wafers

Product ID: PRD5000

MaterialSilicon
Diameter50mm
Type/DopantP/Boron
Orientation<100>
Resistivity>1 ohm-cm
Substrate Thickness275 +/-25um
Surface ConditionSingle Side Polished
Flat/Notch1 Semi-std
Film Thickness1,000Å +/- 5%
Film TypeStoichiometric LPCVD Nitride
Lot Size25 wafers

Product ID: PRD1019

MaterialSilicon
Diameter100mm
Type/DopantP/Boron
Orientation<100>
Resistivity>1 ohm-cm
Substrate Thickness525 +/-25μm
Surface ConditionSingle Side Polished
Flat/Notch2 Semi-std
Film Thickness1,000Å +/- 5%
Film TypeStoichiometric LPCVD Nitride
Lot Size25 wafers
This product consists of 25 pieces of silicon wafers with Stoichiometric LPCVD Nitride - 1,000Å.
Stoichiometric LPCVD Nitride deposited on silicon wafers. Processed in our class 100 cleanroom to ensure a premiμm quality film. This is a furnace process so both surfaces of the wafers will have Nitride. Stoichiometric LPCVD Nitride film stress =>800 MPa Tensile and Refractive Index 2.00 +/- 0.05nm @ 632.8nm. Product to ship with film Certificate of Conformance. Need something different? Please email sales@roguevalleymicro.com for a quote.
1 in stock2 in stock
$1,552.00$1,673.75
per lot

For Orders of more than four, please request a quote to receive a volume pricing discount.

All Sales are Final. RVM Terms and Conditions Apply Shipping PP&A. Lead Time 1 week.