PECVD oxide thin film deposited on silicon wafers at Rogue Valley Microdevices
MEMS Foundry → Thin Film Deposition

Thin Film Deposition Services from a U.S.-Based MEMS Foundry

Thin films form the functional layers that enable sensing, actuation, electrical isolation, and signal control in MEMS devices. Rogue Valley Microdevices provides thin film deposition services inside a complete, U.S.-based MEMS foundry, so every film we deposit is engineered to perform within your full device architecture rather than in isolation. With more than 50 unique dielectric and conductive films, we maintain one of the largest collections of thin films commercially available.

Our approach goes beyond deposition. We develop thin film processes alongside photolithography, etching, and device design to ensure compatibility across every stage of fabrication. This integrated methodology reduces development risk and improves the likelihood of first-pass success. All work is U.S.-based and ITAR-registered, with fabs in Medford, Oregon and Palm Bay, Florida.

Engineering Thin Film Properties for Device Performance

Each MEMS device requires specific material characteristics. We tailor thin film deposition recipes to meet those requirements with precise control over:

  • Film stress, with tensile and low-stress options
  • Thickness uniformity across MEMS device structures
  • Step coverage over complex topography
  • Electrical and dielectric properties
  • Adhesion to underlying layers

Our LPCVD silicon nitride, for example, is available in stoichiometric, low-stress, and super-low-stress recipes, with super-low-stress films running below 100 MPa tensile. That range lets you match film stress to the mechanical behavior your device needs, and keep it consistent across production runs.

Material Systems and Deposition Capabilities

We incorporate a full range of thin film materials into MEMS device architectures, with each layer optimized for downstream lithography and etch:

Film CategoryDeposition MethodsFormulations and Stress TuningWafer CoverageProcess Temperature
Silicon nitrideLPCVD (furnace)Stoichiometric (≥800 MPa tensile), low-stress (<250 MPa), and super-low-stress (<100 MPa) recipesAll exposed surfaces — both sidesHigh
Silicon dioxideThermal oxidation (wet, dry, dry chlorinated)Passivation, masking, and optical layersAll exposed surfaces — both sidesHigh
Dielectrics (PECVD)PECVDOxide, nitride, and oxynitride with tunable stress; oxynitride with tunable refractive indexSingle sideLow
PolysiliconLPCVD (furnace)Undoped films with control over crystallinity, grain size, and film stressAll exposed surfaces — both sidesHigh
Metals and dielectricsPVD (e-beam evaporation and sputtering)Electrodes, interconnects, optical coatings, and bonding padsSingle side — line-of-sightLow

For standalone thin film deposition services on customer-supplied wafers, without full device fabrication, explore our wafer services.

Integrating Thin Film Process Steps

Thin films must be selected to correctly support downstream process steps. Film stress, adhesion, and uniformity directly affect patterning accuracy, etch behavior, and final device performance. We design every deposition process to align with:

  • Photolithography pattern fidelity
  • Dry etch and wet etch selectivity
  • Structural layer performance
  • Electrical and dielectric requirements

By controlling these interactions, we help eliminate common failure modes such as film cracking, delamination, and dimensional drift, while maintaining consistent wafer-level results across complex MEMS architectures.

Integrated thin-film stack exampleAn example film stack on a silicon wafer, built in sequence: thermal oxide, LPCVD silicon nitride, metal, then PECVD oxide.One integrated flow — furnace films first, low-temperature films after metal4. PECVD oxide — low temperature3. Metal — e-beam or sputter2. LPCVD silicon nitride — furnace1. Thermal oxide — furnaceSilicon substrateSilicon
An example integrated stack. High-temperature furnace films — thermal oxide and LPCVD silicon nitride — go down first; once metal is on the wafer, low-temperature PECVD oxide completes the stack. Sequencing each deposition against the steps around it is how the stack stays crack-free, adherent, and dimensionally stable.

Applications Across MEMS and Semiconductor Devices

Our thin film portfolio supports a wide range of MEMS applications, including:

  • MEMS pressure sensors and inertial devices
  • Optical MEMS and photonic structures
  • Microfluidic systems
  • RF MEMS components
  • Semiconductor microdevices

Each application demands precise control of material properties and process interactions. We tailor deposition strategies to those requirements while maintaining compatibility with your full fabrication flow.

A Collaborative Engineering Approach

We work as an extension of your engineering team to define thin film strategies early in development. Our engineers identify integration challenges before they become failures, recommend material selections, and align every process with your device performance targets.

When you partner with Rogue Valley Microdevices, you gain:

  • Direct access to MEMS fabrication experts
  • Transparent process development
  • A clear understanding of how your device is built
  • Flexibility to collaborate across your supply chain

We do not just deposit films. We help you build devices that work.

Request a Quote for Thin Film Deposition Services

Tell us about your film stack, your substrate, and your device, and our engineers will respond with a practical path forward. Request a quote today, or see how deposition fits into our complete MEMS foundry capabilities.

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