Rogue Valley Microdevices engineer holding a 300mm silicon wafer in the fab
MEMS Foundry → Dry Etch

Dry Etch Services: DRIE and Plasma Etching at a U.S.-Based MEMS Foundry

Rogue Valley Microdevices provides dry etch services for silicon wafers, MEMS devices, and semiconductor thin films, including DRIE deep reactive ion etching and plasma etching. Our engineers work directly with you to select the right etch chemistry, mask materials, and process conditions for each application.

Because our dry etch tools operate inside a full MEMS foundry environment, you gain production-grade wafer processing that supports both device development and manufacturing, with wet etch, lithography, and thin-film deposition available on the same line. Dry etch can run as a standalone wafer service or as part of a fully integrated device fabrication flow.

Deep Reactive Ion Etching (DRIE) for Silicon MEMS Structures

Deep reactive ion etching (DRIE) enables high-precision silicon etching for MEMS device fabrication. The process forms deep trenches and cavities while maintaining steep sidewalls and tight dimensional control.

Engineers choose DRIE over conventional plasma etching when device geometry demands deep, vertical features: the combination of anisotropy, dimensional accuracy, and run-to-run repeatability makes it the default choice for high-aspect-ratio silicon structures.

DRIE trench cross-sectionA silicon cross-section with two deep, vertical trenches showing etch depth, minimum feature width, aspect ratio, and 90 degree sidewalls.Etch depth:5µm to through-waferSidewalls vertical at 90 ±1°Minimum feature 3µmAspect ratio to 15:1Directional plasma — ions strike verticallyEtch maskSilicon
DRIE builds the deep geometry. Vertical 90 ±1° sidewalls at aspect ratios to 15:1, from 5µm-deep features to through-wafer etches, with 3µm minimum features. The patterned mask defines each feature; the directional plasma removes silicon only where the mask is open.

Standard DRIE technical specifications:

ParameterCapability
Aspect RatioStandard processing up to 15:1
Etch Depth5µm to through-wafer
Minimum Feature (CD)3µm
Sidewall ProfileVertical profiles maintained at 90 ±1 degrees
UniformityDepth uniformity within ±5% on deep etches, with controlled feature dimensions from center to edge of 200mm silicon wafers

DRIE silicon etching enables the three-dimensional microstructures that define MEMS device performance, including:

  • Pressure sensor cavities
  • Microfluidic channels
  • Suspended mechanical structures
  • MEMS actuators and resonators
  • Optical MEMS components

Plasma Etching for Thin Films and Dielectric Layers

Plasma etching removes material through a controlled combination of reactive gas chemistry and ion bombardment, letting engineers pattern dielectric films while holding tight control of etch rates and feature dimensions. Our plasma dry etch processes support the dielectric films used in MEMS fabrication, including:

  • Silicon dioxide (SiO₂)
  • Silicon nitride (Si₃N₄)
  • Silicon oxynitride

Fluorine-based plasma chemistries provide high selectivity and clean etch profiles when processing dielectric films deposited through PECVD, LPCVD, and thermal oxidation processes.

Etch, Lithography, and Deposition Under One Roof

Plasma dry etching plays a key role after photolithography patterning, where patterned photoresist masks define the areas of material removal. Because thin-film deposition, masking, etch, and metrology all happen in one fab, we can tune each step against the ones around it instead of handing wafers between vendors.

Etch Verification and Process Monitoring

Every etch runs with verification built in. We measure etch depth against target, monitor uniformity across the wafer, and track run-to-run repeatability so results stay consistent from wafer to wafer and lot to lot. Each step is recorded on process travelers, giving you a traceable record of exactly how your wafers were etched.

DRIE or Wet Etch?

DRIE produces vertical, high-aspect-ratio features, while anisotropic silicon wet etching with KOH or TMAH delivers crystal-plane geometry and batch-process economy. Plasma etch can also be combined with wet etch techniques for optimal results during MEMS fabrication. Our DRIE vs. silicon wet etch guide walks through the trade-offs. And when a metal resists etching altogether, our metal lift-off process patterns it additively instead.

Applications for Dry Etch and DRIE

Engineers rely on plasma etch and DRIE processes to shape materials with the accuracy required for advanced microtechnology. Common applications include:

  • MEMS pressure sensors
  • Accelerometers, gyroscopes, and inertial measurement units (IMUs)
  • Microfluidic and biomedical MEMS devices
  • RF MEMS switches
  • Optical MEMS structures
  • Silicon microcavities and trenches

Request a Quote for Dry Etch Services

Send us your device geometry, substrate, and target features, and our process engineers will recommend the right dry etch approach and turn around a practical quote. Request a quote to get started.

Request a Quote