PECVD Films: U.S.-Based PECVD Deposition Services for MEMS and Sensor Devices
Rogue Valley Microdevices deposits PECVD films on silicon wafers at our U.S.-based, ITAR-registered MEMS fab. Our PECVD deposition services cover silicon dioxide, silicon nitride, and silicon oxynitride with reliable dielectric insulation, controlled film stress, and low processing temperatures that protect temperature-sensitive device layers.
PECVD Thin Film Deposition at a Working MEMS Fab
Plasma enhanced chemical vapor deposition (PECVD) produces high-quality dielectric thin films at relatively low processing temperatures, which makes it an essential technology for MEMS fabrication and semiconductor manufacturing. Because these films deposit at moderate temperatures, they are back-end-of-line (BEOL) compatible: they integrate cleanly with temperature-sensitive device structures and can go down over existing metal and device layers late in a process flow.
Every PECVD film we ship runs on the same equipment and recipes we use to build MEMS devices in our own foundry. This wafer service can be combined with thermal oxidation or deposited over PVD metal and dielectric films, all without your wafers ever leaving our fab.
PECVD thin films are widely used for device passivation, dielectric insulation, and protective coatings in microfabricated devices. By pairing controlled plasma-assisted deposition with flexible wafer processing, we support engineers developing MEMS sensors, semiconductor components, and advanced microdevices.
Why Choose Rogue Valley Microdevices for PECVD Deposition Services
PECVD Films Available at Our MEMS Foundry
We deposit the following PECVD film types, each tunable to your thickness and stress targets:
| PECVD Film | Maximum Thickness | Property Control | Typical Applications |
|---|---|---|---|
| Silicon dioxide (SiO₂) | Up to 5µm standard; up to 6µm on 100mm and 150mm wafers by customer need; 1µm maximum on 300mm | Standard and low-temperature recipes | Dielectric isolation, interlayer insulation, device passivation |
| Silicon nitride (SiN) | Up to 0.5µm (standard) | Low-temperature options preserve underlying metal layers | Passivation, moisture barriers, protective coatings |
| Low-stress nitride | Up to 2µm | <250 MPa tensile; low-temperature option available | Stress-matched membranes, multilayer stacks |
| Silicon oxynitride (SiON) | Up to 4µm standard; up to 6µm on 100mm and 150mm wafers by customer need; 5000Å maximum on 300mm | Tunable oxygen-to-nitrogen ratio; targeted refractive index 1.50–2.00; low-temperature (<350 °C) option | Optical MEMS, waveguide structures, controlled-RI layers |
Supported Wafer Sizes and Materials
PECVD deposition is available on 50.8mm, 76.2mm, 100mm, 125mm, 150mm, 200mm, and 300mm wafers. Double-side-polished wafers with existing backside patterning are supported on our recessed-platen tool, which keeps the wafer backside off the heater surface. Supported substrate materials include:
- Silicon
- Silicon on insulator (SOI)
- Quartz
- Sapphire
- Other specialty materials
PECVD Silicon Dioxide (SiO₂)
Process engineers commonly use PECVD silicon dioxide as an electrical insulation layer or dielectric isolation film in the microfabrication of critical devices. PECVD oxide films offer consistent coverage and reliable electrical properties across the wafer. Typical applications include dielectric isolation layers, interlayer insulation, and MEMS device passivation.
We deposit standard PECVD oxide films up to 5µm thick, with extended depositions to 6µm available on 100mm and 150mm wafers based on customer need, in our MEMS foundry. Available options:
- PECVD oxide
- Low-temperature PECVD oxide
PECVD Silicon Nitride (SiN)
PECVD silicon nitride films provide surface passivation and dielectric protection in MEMS and semiconductor devices, shielding device structures from environmental exposure while maintaining reliable electrical isolation. Typical uses include passivation layers, moisture barrier coatings, dielectric insulation, and protective coatings for MEMS devices. Unlike our LPCVD silicon nitride, these films deposit at low temperatures, so they can go down over existing device layers.
We deposit PECVD silicon nitride films in thicknesses up to 2µm with low-stress recipes; standard nitride films run up to 0.5µm. Available options:
- PECVD nitride
- Low-temperature PECVD nitride
- Low-stress PECVD nitride (<250 MPa tensile)
- Low-temperature, low-stress PECVD nitride
PECVD Silicon Oxynitride (SiON)
PECVD silicon oxynitride (SiON) is a versatile dielectric that combines the properties of silicon dioxide and silicon nitride. Our engineers adjust the oxygen-to-nitrogen ratio during deposition to hit a wide range of electrical, optical, and mechanical targets, which makes SiON a strong fit for optical MEMS, photonic devices, waveguide structures, and films requiring a controlled refractive index.
We deposit PECVD SiON films up to 4µm thick as a standard offering, extended to 6µm on 100mm and 150mm wafers based on customer need, and up to 5000Å on 300mm wafers, with the refractive index or film stress customized to your process requirements. Available options:
- Targeted refractive index SiON
- Targeted film stress SiON
- Low-temperature SiON (<350 °C)
Advantages of Our PECVD Thin Films
PECVD deposition offers several advantages for semiconductor and MEMS manufacturing processes:
- Low-temperature thin film deposition
- Reliable dielectric insulation layers
- Consistent wafer-level film uniformity
- Strong adhesion to silicon wafers and other substrates
- Controlled film stress for device integration
- Good conformal coverage across microstructures
These characteristics make PECVD films particularly useful in process flows where thermal budgets are limited or where films must be deposited over existing device layers.
PECVD Film Applications
- MEMS pressure sensors
- Accelerometers and inertial sensing devices
- Microfluidic and lab-on-chip devices
- Optical MEMS components
- Device passivation
- Dielectric isolation layers
From Prototype to Production
Because our PECVD deposition services run inside a working MEMS foundry, the film on your first prototype lot is the same production-grade film you will get at volume. Our engineers share process data openly and help you plan how a PECVD layer fits your full stack, from thin film deposition through downstream patterning and etch. If you are still defining your device, our MEMS design services team can help you get the film stack right from day one.
Request a Quote for PECVD Films
Tell us your film type, thickness, stress or refractive index targets, and substrate, and our engineers will respond with a practical process recommendation, not just a price. Request a quote to start your PECVD deposition project, or browse our ready-to-ship wafer inventory if you need coated wafers now.