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Low stress LPCVD nitride is one of our most popular films and is often used for building membranes, cantilever beams, and other mechanical structures. Low stress nitride is also very effective as a KOH mask and can be deposited up to 2µm in thickness.

Our engineers have over 15 years experience in developing and optimizing LPCVD nitride films. Our low stress LPCVD nitride process is a mature stable process that you can count on. We believe that our ability to provide you with consistent, high quality, low stress nitride will help to enhance repeatability throughout your manufacturing process.

Low Stress Lpcvd Nitride rogue valley microdevices mems


  • Thickness range: 50Å – 2µm
  • Thickness tolerance: +/-5%
  • Within wafer uniformity: +/-5% or better
  • Wafer to wafer uniformity: +/-5% or better
  • Sides processed: both
  • Refractive index: 2.20 +/-.02
  • Film stress: <250MPa Tensile Stress
  • Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
  • Wafer thickness: 100µm – 2,000µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 820C°
  • Gases: Dichlorosilane, Ammonia
  • Equipment: Horizontal vacuum furnace