Dry Thermal Oxide – 1,000Å

Parameters

Film TypeDry Thermal Oxide
Film Thickness1,000Å +/- 5%
Lot Size25 wafers

Product ID: PRD1511

Material: Silicon
Diameter: 150mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: >1 ohm-cm
Substrate Thickness: 675 +/-25μm
Surface Condition: Single Side Polished
Flat/Notch: 1 Semi-std
Film Thickness: 1,000Å +/- 5%
Film Type: Dry Thermal Oxide
Lot Size: 25 wafers
This product consists of 25 pieces of silicon wafers with Dry Thermal Oxide - 1,000Å.
Dry Thermal Oxide grown on silicon wafers. Substrates are cleaned prior to processing in our class 100 cleanroom to ensure a premiμm quality film. This is a furnace process so both surfaces of the wafers will have oxide. Product to ship with film Certificate of Conformance. Need something different? Please email sales@roguevalleymicro.com for a quote.
4 in stock
$1,964.75
per lot

For Orders of more than four, please request a quote to receive a volume pricing discount.

All Sales are Final. RVM Terms and Conditions Apply Shipping PP&A. Lead Time 1 week.