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Targeted Low Stress LPCVD Nitride – 1.5μm 200MPa

Parameters

Film Type	Targeted Low Stress LPCVD Nitride
Film Thickness	1.5um +/-5%
Lot Size	1 wafer

Product ID: PRD2005

Material:	Silicon
Diameter:	200mm
Type/Dopant:	P/Boron
Orientation:	<100>
Resistivity:	>1 ohm-cm
Substrate Thickness:	725 +/-25um
Surface Condition:	Single Side Polished
Flat/Notch:	Notched
Film Thickness:	1.5um +/-5%
Film Type:	Targeted Low Stress LPCVD Nitride
Lot Size:	1 wafer

This product consists of 1 silicon wafers with Targeted Low Stress LPCVD Nitride - 1.5um 200MPa

Targeted Low Stress LPCVD Nitride deposited on silicon wafers. Processed in our class 100 cleanroom to ensure a premiμm quality film. This is a furnace process so both surfaces of the wafers will have Nitride. Targeted Low Stress LPCVD Nitride film stress 200MPa Tensile. Product to ship with film Certificate of Conformance. Need something different? Please email sales@roguevalleymicro.com for a quote.

200mm PRD2005 $240.37

7 in stock

$240.37

Per Wafer

For Orders of more than four, please request a quote to receive a volume pricing discount.

All Sales are Final. RVM Terms and Conditions Apply Shipping PP&A. Lead Time 1 week.