Stoichiometric LPCVD Nitride – 4,000Å
Parameters
| Film Type | Stoichiometric LPCVD Nitride |
| Film Thickness | 4,000Å +/- 5% |
| Lot Size | 25 wafers |
Product ID: PRD1018
| Material: | Silicon |
| Diameter: | 100mm |
| Type/Dopant: | P/Boron |
| Orientation: | <100> |
| Resistivity: | >1 ohm-cm |
| Substrate Thickness: | 525 +/-25μm |
| Surface Condition: | Single Side Polished |
| Flat/Notch: | 2 Semi-std |
| Film Thickness: | 4,000Å +/- 5% |
| Film Type: | Stoichiometric LPCVD Nitride |
| Lot Size: | 25 wafers |
This product consists of 25 pieces of silicon wafers with Stoichiometric LPCVD Nitride - 4,000Å.
Stoichiometric LPCVD Nitride deposited on silicon wafers. Processed in our class 100 cleanroom to ensure a premiμm quality film. This is a furnace process so both surfaces of the wafers will have Nitride. Stoichiometric LPCVD Nitride film stress =>800 MPa Tensile and Refractive Index 2.00 +/- 0.05nm @ 632.8nm. Product to ship with film Certificate of Conformance. Need something different? Please email sales@roguevalleymicro.com for a quote.
2 in stock
$1,852.50
per lotFor Orders of more than four, please request a quote to receive a volume pricing discount.
All Sales are Final. RVM Terms and Conditions Apply Shipping PP&A. Lead Time 1 week.
