LPCVD Undoped Polysilicon

LPCVD undoped polysilicon has many uses in MOS and MEMS applications. LPCVD polysilicon is deposited when silane (SiH4) decomposes into silicon (Si) and hydrogen (2H2) at temperatures above 580C.

LPCVD Undoped Polysilicon

We offer two different process temperatures, 580°C and 620°C, so we can deliver thicknesses of up to 3µm. We can process 50.8mm-200mm silicon and fused silica wafers.

Need a multi-layer film stack?

Our LPCVD undoped 580°C polysilicon can be converted into thermal oxide. This allows you to have a thermal oxide layer on top of an LPCVD nitride layer.

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