LPCVD POLYSILICON

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LPCVD Undoped Polysilicon has many uses in MOS and MEMS applications. LPCVD Polysilicon is deposited when Silane (SiH4) decomposes into Silicon (Si) and Hydrogen (2H2) at temperatures above 580C.

The degree of crystallinity and the uniformity can be controlled by optimizing process pressure and temperature parameters. The manipulation of process temperature can also used to control grain size and film stress.

Rogue Valley Microdevices offers a variety of Polysilicon films by tailoring deposition conditions. We can offer Polysilicon films in standard or small (fine) grain film composition, along with different film stress levels ideal for many MEMS specific applications.

 polysilicon PecvdSiliconCarbide-002PecvdSiliconCarbide-001

Specifications

  • Thickness range: 100Å – 20,000Å
  • Thickness tolerance: 100A +/- 30%; 150-250A +/- 20%; 300-499A +/- 15%; =>500A +/-10%
  • Within wafer uniformity: +/-7% or better
  • Wafer to wafer uniformity: +/-7% or better
  • Sides processed: Both
  • Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm, 300mm
  • Wafer thickness: 100µm – 2,000µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 580C° – 650C°
  • Gases: Silane
  • Equipment: Horizontal Vacuum Furnace