Wet Thermal Oxide – 2,000Å / Stoichiometric LPCVD Nitride – 2,000Å
Parameters
| Film Type | Wet Thermal Oxide / Stoichiometric LPCVD Nitride |
| Film Thickness | WTO - 2,000Å / SiN - 2,000Å +/- 5% |
| Lot Size | 25 wafers |
Product ID: PRD1027
| Material: | Silicon |
| Diameter: | 100mm DSP |
| Type/Dopant: | P/Boron |
| Orientation: | <100> |
| Resistivity: | >1 ohm-cm |
| Substrate Thickness: | 525 +/-25μm |
| Surface Condition: | Double Side Polished |
| Flat/Notch: | 2 Semi-std |
| Film Thickness: | WTO - 2,000Å / SiN - 2,000Å +/- 5% |
| Film Type: | Wet Thermal Oxide / Stoichiometric LPCVD Nitride |
| Lot Size: | 25 wafers |
This product consists of 25 pieces of silicon wafers with Wet Thermal Oxide - 2,000Å / Stoichiometric LPCVD Nitride - 2,000Å. It is a 2-layer film stack.
2-layer film stack. Wet Thermal Oxide is grown followed by Stoichiomtetric LPCVD Nitride deposition. Substrates are cleaned prior to processing in our class 100 cleanroom to ensure a premiμm quality film. This is a furnace process so both surfaces of the wafers will have oxide. Stoichiometric LPCVD Nitride film stress =>800 MPa Tensile and Refractive Index 2.00 +/- 0.05 @ 632.8nm. Product to ship with film Certificate of Conformance. Need something different? Please email sales@roguevalleymicro.com for a quote.
4 in stock
$2,379.00
per lotFor Orders of more than four, please request a quote to receive a volume pricing discount.
All Sales are Final. RVM Terms and Conditions Apply Shipping PP&A. Lead Time 1 week.
