Low Stress LPCVD Nitride – 1μm

Parameters

Film TypeLow Stress LPCVD Nitride
Film Thickness1μm +/- 5%
Lot Size25 wafers

Product ID: PRD1026

Material: Silicon
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: >1 ohm-cm
Substrate Thickness: 525 +/-25μm
Surface Condition: Single Side Polished
Flat/Notch: 2 Semi-std
Film Thickness: 1μm +/- 5%
Film Type: Low Stress LPCVD Nitride
Lot Size: 25 wafers
This product consists of 25 pieces of silicon wafers with Low Stress LPCVD Nitride - 1μm.
Low Stress LPCVD Nitride deposited on silicon wafers. Processed in our class 100 cleanroom to ensure a premiμm quality film. This is a furnace process so both surfaces of the wafers will have Nitride. Low Stress LPCVD Nitride film stress <250MPa Tensile and Refractive Index 2.20 +/- 0.05nm @ 632.8nm. Product to ship with film Certificate of Conformance. Need something different? Please email sales@roguevalleymicro.com for a quote.
2 in stock
$2,876.25
per lot

For Orders of more than four, please request a quote to receive a volume pricing discount.

All Sales are Final. RVM Terms and Conditions Apply Shipping PP&A. Lead Time 1 week.