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Our dry chlorinated thermal oxidation is recommended for use in MOS and other active device fabrication processes. Using dry chlorinated thermal oxide can help your device to perform to its highest potential by eliminating metal ions.

We recommend adding a forming gas (N2/H2) anneal after oxidation to passivate dangling bonds. Dangling bonds at the silicon interface can have an effect on the insulating properties of your oxide. Adding a forming gas anneal will insure that you are the receiving the maximum benefit of your dry chlorinated oxide.

We also offer the opportunity to customize our standard process to meet your needs. In many cases the temperature, ramp rates, and gas flows can be modified to achieve the result you are looking for.

Thermal Oxidation

Dry Thermal Oxidation Specifications

  • Thickness range: 100Å – 2000Å
  • Thickness tolerance: 100Å+/-15Å, >200Å+/-5%
  • Within wafer uniformity: +/-3% or better
  • Wafer to wafer uniformity: +/-5% or better
  • Sides processed: Both
  • Refractive index: 1.456
  • Film stress: -320MPa (Compressive)
  • Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
  • Wafer thickness: 100µm – 2,000µm
  • Wafer material: Silicon, Silicon on Insulator
  • Temperature: 950C° – 1050C°
  • Gases: Oxygen
  • Chemical vapor: TransLC (Chlorine Source)
  • Equipment: Horizontal Furnace