Wet Thermal Oxide – 4,000Å / Sputter Ti-Cu 1,500Å/ Ti-Cu 1,500Å
Parameters
| Film Type | Wet Thermal Oxide / SputterTitanium-Copper (TiCu) |
| Film Thickness | WTO - 4,000Å / PVD Ti-Cu - 3,000Å |
Product ID: PRD2004
| Material: | Silicon |
| Diameter: | 200mm |
| Type/Dopant: | P/Boron |
| Orientation: | <100> |
| Resistivity: | >1 ohm-cm |
| Substrate Thickness: | 725 +/-25um |
| Surface Condition: | Single Side Polished |
| Flat/Notch: | Notched |
| Film Thickness: | WTO - 4,000Å / PVD Ti-Cu - 3,000Å |
| Film Type: | Wet Thermal Oxide / SputterTitanium-Copper (TiCu) |
| Per Wafer: | 1 wafer |
This product consists of 23 pieces of silicon wafers with Wet Thermal Oxide - 4,000Å / Sputter Ti-Cu 1,500Å / Ti-Cu 1,500Å.
Wet Thermal Oxide is grown followed by Sputtered Ti-Cu/Ti-Cu deposition. Substrates are cleaned prior to processing in our class 100 cleanroom to ensure a premium quality film. Thermal Oxide is a furnace process so both surfaces of the wafers will have oxide. Sputtered metals is a single side deposition with thickness tolerance of +/-10%. Product to ship with film Certificate of Conformance. Need something different? Please email sales@roguevalleymicro.com for a quote.
23 in stock
$248.70
Per WaferCan be ordered as a single wafer. Will ship in a single wafer carrier.
All Sales are Final. RVM Terms and Conditions Apply Shipping PP&A. Lead Time 1 week.
