Wet Thermal Oxide – 4μm
Parameters
| Film Type | Wet Thermal Oxide |
| Film Thickness | 4μm +/- 5% |
| Lot Size | 25 wafers |
Product ID: PRD2001
| Material | Silicon |
| Diameter | 200mm |
| Type/Dopant | P/Boron |
| Orientation | <100> |
| Resistivity | >1 ohm-cm |
| Substrate Thickness | 725 +/-25um |
| Surface Condition | Single Side Polished |
| Flat/Notch | Notched |
| Film Thickness | 4μm +/- 5% |
| Film Type | Wet Thermal Oxide |
| Lot Size | 25 wafers |
Product ID: PRD1008
| Material | Silicon |
| Diameter | 100mm |
| Type/Dopant | P/Boron |
| Orientation | <100> |
| Resistivity | >1 ohm-cm |
| Substrate Thickness | 525 +/-25μm |
| Surface Condition | Single Side Polished |
| Flat/Notch | 2 Semi-std |
| Film Thickness | 4μm +/- 5% |
| Film Type | Wet Thermal Oxide |
| Lot Size | 25 wafers |
Product ID: PRD1507
| Material | Silicon |
| Diameter | 150mm |
| Type/Dopant | P/Boron |
| Orientation | <100> |
| Resistivity | >1 ohm-cm |
| Substrate Thickness | 675 +/-25μm |
| Surface Condition | Single Side Polished |
| Flat/Notch | 1 Semi-std |
| Film Thickness | 4μm +/- 5% |
| Film Type | Wet Thermal Oxide |
| Lot Size | 25 wafers |
This product consists of 25 pieces of silicon wafers with Wet Thermal Oxide - 4μm.
Wet Thermal Oxide grown on silicon wafers. Substrates are cleaned prior to processing in our class 100 cleanroom to ensure a premiμm quality film. This is a furnace process so both surfaces of the wafers will have oxide. Product to ship with film Certificate of Conformance. Need something different? Please email sales@roguevalleymicro.com for a quote.
4 in stock2 in stock4 in stock
$1,959.75 – $2,941.25
per lotFor Orders of more than four, please request a quote to receive a volume pricing discount.
All Sales are Final. RVM Terms and Conditions Apply Shipping PP&A. Lead Time 1 week.
