Low Stress LPCVD Nitride – 3,000Å
Parameters
| Film Type | Low Stress LPCVD Nitride |
| Film Thickness | 3,000Å +/- 5% |
| Lot Size | 25 wafers |
Product ID: PRD1016
| Material: | Silicon |
| Diameter: | 100mm |
| Type/Dopant: | P/Boron |
| Orientation: | <100> |
| Resistivity: | >1 ohm-cm |
| Substrate Thickness: | 525 +/-25μm |
| Surface Condition: | Single Side Polished |
| Flat/Notch: | 2 Semi-std |
| Film Thickness: | 3,000Å +/- 5% |
| Film Type: | Low Stress LPCVD Nitride |
| Lot Size: | 25 wafers |
This product consists of 25 pieces of silicon wafers with Low Stress LPCVD Nitride - 3,000Å.
Low Stress LPCVD Nitride deposited on silicon wafers. Processed in our class 100 cleanroom to ensure a premiμm quality film. This is a furnace process so both surfaces of the wafers will have Nitride. Low Stress LPCVD Nitride film stress <250MPa Tensile and Refractive Index 2.20 +/- 0.05nm @ 632.8nm. Product to ship with film Certificate of Conformance. Need something different? Please email sales@roguevalleymicro.com for a quote.
3 in stock
$2,317.25
per lotFor Orders of more than four, please request a quote to receive a volume pricing discount.
All Sales are Final. RVM Terms and Conditions Apply Shipping PP&A. Lead Time 1 week.
