PRD1025 – 100mm Silicon Wafers 100A Dry Thermal Oxide


Product ID: PRD1025
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 100A +/- 30% Dry Thermal Oxide
**1 Lot = 25 wafers

All Sales are Final.  RVM Terms and Conditions Apply
Shipping PP&A.  Lead time 1 week

2 in stock

SKU: PRD1025 Categories: ,


This product consist of 100mm silicon wafers with 100A of Dry Thermal Oxide.

Our ultra-pure Dry Oxidation process is available for those applications requiring thinner oxides, and is designed to ensure that you receive the highest quality film.

  Stoichiometric LPCVD Nitride Parameters

Thickness 95Å – 105Å
Thickness Tolerance 100Å +/-30%
Sides Pressed Both
Refractive Index 1.456  +/-.02 @632.8nm
Film Stress -320MPa +/-50MPa Compressive
Wafer Thickness Std. Thickness
Wafer Material Silicon
Temperature 900C°-1050C°
Gasses Oxygen
Equipment Horizontal Furnace

Additional information