Dry Thermal Oxidation

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Our ultra pure dry oxidation process is available for those applications requiring thinner oxides and is designed to ensure that you receive the highest quality film. Check out our standard dry thermal oxidation parameters on the right.

We also offer the opportunity to customize our standard process to meet your needs. In many cases the temperature, ramp rates, and gas flows can be modified to achieve the result you are looking for.

Dry Thermal Oxidation Rogue valley microdevices memsDryThermalOxidation-002

Specifications

  • Thickness range: 100Å – 2000Å
  • Thickness tolerance: 100Å+/-15Å, 200Å+/-20Å, >200Å+/-5%
  • Within wafer uniformity: +/-3% or better
  • Wafer to wafer uniformity: +/-5% or better
  • Sides processed: Both
  • Refractive index: 1.456
  • Film stress: -320MPa (Compressive)
  • Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
  • Wafer thickness: 100µm – 2,000µm
  • Wafer material: Silicon, Silicon on Insulator
  • Temperature: 950C° – 1050C°
  • Gases: Oxygen
  • Equipment: Horizontal Furnace