E-BEAM EVAPORATION FOR LIFT-OFF AND PRECIOUS METAL DEPOSITION

Our E-Beam evaporation process provides excellent film thickness control and can deposit up to six different materials in-situ. E-Beam evaporation is often used when precious metals deposition is required and is an excellent choice for wafers that require lift-off processing.

In order to ensure the best results for metal lift-off, the underlying wafer and photoresist must be kept cool during metal deposition. This can be difficult to achieve while depositing thick layers. Rogue Valley Microdevices has developed a specialized low temperature E-Beam evaporation process specifically for use during metal lift-off processing.

The surface preparation of patterned silicon and quartz wafers intended for lift-off metal is also extremely important. We include photoresist bake and O2 descum steps just prior to deposition to improve film adhesion.

Films available for deposition

We offer a wide variety of E-Beam evaporation precious and non-precious metals. Non-precious metals and dielectric materials are available for sputtering.

Metals available for E-Beam evaporation include:

  • Aluminum
  • Chromium
  • Copper
  • Gold
  • Indium Tin oxide
  • Platinum
  • Nickel
  • Silver
  • Titanium
  • Tin

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Specifications

  • Thickness range: Varies depending on metal
  • Thickness tolerance: +/-5%
  • Within wafer uniformity: +/-5% or better
  • Wafer to wafer uniformity: +/-5% or better
  • Sides processed: One
  • Wafer size: 100mm, 150mm, 200mm
  • Wafer thickness: Semi standard
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Gases: Argon, Nitrogen
  • Equipment: E-Beam Evaporation tool