SUPER LOW STRESS LPCVD NITRIDE

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Our super low stress LPCVD nitride has all of the same benefits of our low stress LPCVD nitride and can be deposited up to even greater thickness. We have developed our super low stress LPCVD nitride for applications that require a film that has extremely low stress. This specially engineered super low stress LPCVD nitride can be deposited up to 4µm in thickness without cracking or peeling.

Super low stress LPCVD nitride adds flexibility to many device fabrication processes and is now commercially available in greater thicknesses than ever before! Call now to discuss your unique needs with our highly knowledgeable staff.

Super Low Stress LPCVD Nitride rogue valley microdevices mems

Specifications

  • Thickness range: 50Å – 2µm
  • Thickness tolerance: +/-5%
  • Within wafer uniformity: +/-5% or better
  • Wafer to wafer uniformity: +/-5% or better
  • Sides processed: both
  • Refractive index: 2.30 +/-.05
  • Film stress: <100MPa Tensile Stress
  • Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm
  • Wafer thickness: 100µm – 2,000µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 820C°
  • Gases: Dichlorosilane, Ammonia
  • Equipment: Horizontal vacuum furnace