STANDARD AND LOW STRESS PECVD NITRIDE FILMS

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Our PECVD nitride can be a great alternative to LPCVD nitride when it becomes important to stay within lower temperature ranges. Widely used in MEMS and semiconductor processing, PECVD nitride is a tensile stress film that can be used as a passivation layer or to help balance film stress within a stack. Using PECVD nitride in addition to PECVD oxide will help to reduce overall film stress, preventing delaminating and micro-cracking.

In addition to our standard PECVD nitride we also offer low stress PECVD nitride for applications where a thicker film is required.

PECVD Nitride rogue valley microdevices mems

Specifications

  • Thickness range: 100Å – 2µm
  • Thickness tolerance: +/-7%
  • Within wafer uniformity: +/-7% or better
  • Wafer to wafer uniformity: +/-7% or better
  • Sides processed: One
  • Refractive index: 1.98+/-.05
  • Film stress: <200MPa(Low Stress), +400MPa (Standard)
  • Wafer size: 50mm, 100mm, 125mm, 150mm, 200mm, 300mm
  • Wafer thickness: 100µm – 2,000µm
  • Wafer material: Silicon, Silicon on Insulator, Quartz
  • Temperature: 300C° – 400C°
  • Gases: Silane, Ammonia, Nitrogen
  • Equipment: PlasmaTherm batch PECVD deposition tool