LPCVD Nitride Process

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Stoichiometric LPCVD Nitride

Our stoichiometric LPCVD nitride can be a very effective insulator and works great as a KOH etch mask when deposited over thermal oxide. This versatile film can be used for building MEMS devices or as a tool for defining active regions during field oxidation. As with all of our films, we have worked hard to develop a stable and consistent stoichiometric LPCVD nitride process that can be used for many applications.

With our fast lead-time you can feel confident using our stoichiometric LPCVD nitride throughout your device fabrication process. We encourage you to take advantage of our process reservation options, and pre-schedule your nitride runs before your wafers arrive at our facility.

Stoichiometric Lpcvd Nitride-002

Nitride Specifications

  • Thickness range: 100Å – 4500Å
  • Sides processed: Both
  • Refractive index: 2.00 +/-.05 @632nm
  • Film stress: >800MPa Tensile Stress
  • Wafer size: 2″-8″
  • Temperature: 800C°
  • Gases: Dichlorosilane, Ammonia
  • Equipment: Horizontal vacuum furnace