Stoichiometric LPCVD Nitride ProcessRequest a Quote Shop
Our stoichiometric LPCVD nitride can be a very effective insulator and works great as a KOH etch mask when deposited over thermal oxide. This versatile film can be used for building MEMS devices or as a tool for defining active regions during field oxidation. As with all of our films, we have worked hard to develop a stable and consistent stoichiometric LPCVD nitride process that can be used for many applications.
With our fast lead-time you can feel confident using our stoichiometric LPCVD nitride throughout your device fabrication process. We encourage you to take advantage of our process reservation options, and pre-schedule your nitride runs before your wafers arrive at our facility.
- Thickness range: 100Å – 4500Å
- Sides processed: Both
- Refractive index: 2.00 +/-.05 @632nm
- Film stress: >800MPa Tensile Stress
- Wafer size: 2″-8″
- Temperature: 800C°
- Gases: Dichlorosilane, Ammonia
- Equipment: Horizontal vacuum furnace