100mm Silicon Wafers 40,000A Wet Thermal Oxide

$950.00

Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 40,000A +/- 5% Wet Thermal Oxide


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We have designed our Wet Thermal Oxidation process to ensure that you receive the highest quality films.  This product consists of medium resistivity Silicon wafers coated with 4um of our ultra-pure Wet thermal Oxide.   All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.

  Wet Thermal Oxidation Parameters

Thickness3,8000Å – 42,000Å
Thickness Tolerance40,000Å +/-5%
Sides PressedBoth
Refractive Index1.456 +/-0.02 @ 632.8nm
Film Stress-320MPa +/-50MPa (Compressive)
Wafer ThicknessStd. Thickness
Wafer MaterialSilicon
Temperature900C° – 1050C°
GassesOxygen
EquipmentHorizontal Furnace