76mm Silicon Wafers 21,000A Wet Thermal Oxide


Product ID: PRD7602
Substrate: Silicon Wafers
Diameter: 76mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-10 Ohm-cm
Thickness: 380 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 21,000A +/- 5% Wet Thermal Oxide

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SKU: PRD7602 Categories: ,

This product consist of 76mm silicon wafers with 2.1um of Wet thermal Oxide. Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices.  Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive premium quality films that provide the consistency and repeatability needed make your project a success.  All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.

Silicon Wafer 76mm 21,000A Wet Thermal Oxidation Parameters

Thickness 9,500Å – 20,100Å
Thickness Tolerance 15,000Å+/-5%
Sides Pressed Both
Refractive Index 1.456 +/-0.02 @ 632.8nm
Film Stress -320MPa +/-50MPa (Compressive)
Wafer Thickness Std. Thickness
Wafer Material Silicon
Temperature 900C° – 1050C°
Gasses Oxygen
Equipment Horizontal Furnace

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