76mm Silicon Wafers 20,100A Wet Thermal Oxide

$900.00

Product ID: PRD7602
Substrate: Silicon Wafers
Diameter: 76mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-10 Ohm-cm
Thickness: 380 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 20,100A +/- 5% Wet Thermal Oxide


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SKU: PRD7602 Categories: ,

This product consist of 76mm silicon wafers with 2.1um of Wet thermal Oxide. Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices.  Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive premium quality films that provide the consistency and repeatability needed make your project a success.  All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.

Silicon Wafer 76mm 20,100A Wet Thermal Oxidation Parameters

Thickness9,500Å – 20,100Å
Thickness Tolerance15,000Å+/-5%
Sides PressedBoth
Refractive Index1.456 +/-0.02 @ 632.8nm
Film Stress-320MPa +/-50MPa (Compressive)
Wafer ThicknessStd. Thickness
Wafer MaterialSilicon
Temperature900C° – 1050C°
GassesOxygen
EquipmentHorizontal Furnace

Additional information

Diameter

Type/Dopant

Orientation

Resistivity

Surface

Film