PRD1027- 100mm DSP Silicon Wafers 2,000A Wet Thermal Oxide/ 2,000A Stoichiometric LPCVD Nitride

$2,275.00

Product ID: PRD1027
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1 – 20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Polished
Film: 2000A +/- 5% Wet Thermal Oxide/ 2000A +/-5% Stoichiometric LPCVD Nitride


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4 in stock

Description

2,000Å Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices.  Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive the highest quality films. All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.

Our Stoichiometric LPCVD Nitride can be a very effective insulator and works great as a KOH etch mask when deposited over thermal oxide. This versatile film can be used for building MEMS devices or as a tool for defining active regions during field oxidation. As with all of our films, we have worked hard to develop a stable and consistent Stoichiometric LPCVD Nitride process that can be used for many applications.

 

100mm DSP Silicon Wafers 2,000A Wet Thermal Oxidation & 2,000A Stoichiometric LPCVD Deposition Parameters

Oxide Thickness 2,000Å +/-5%
Nitride Thickness 2,000Å+/-5%
Sides Processed Both
Oxide Refractive Index 1.456 +/-0.02 @ 632.8nm
Nitride Refractive Index 2.00 +/-0.05 @ 632.8nm
Oxide Film Stress -320MPa +/-50MPa (Compressive)
Nitride Film Stress ≥800 MPa (Tensile)
Wafer Thickness Std. Thickness 525um
Wafer Material Silicon
Oxide Temperature 900C° – 1050C°
Nitride Temperature 800C° – 850C°

Additional information

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Type/Dopant

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Film