2,000Å Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices. Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive the highest quality films. All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.
Our Stoichiometric LPCVD Nitride can be a very effective insulator and works great as a KOH etch mask when deposited over thermal oxide. This versatile film can be used for building MEMS devices or as a tool for defining active regions during field oxidation. As with all of our films, we have worked hard to develop a stable and consistent Stoichiometric LPCVD Nitride process that can be used for many applications.
100mm DSP Silicon Wafers 2,000A Wet Thermal Oxidation & 2,000A Stoichiometric LPCVD Deposition Parameters
|Oxide Thickness||2,000Å +/-5%|
|Oxide Refractive Index||1.456 +/-0.02 @ 632.8nm|
|Nitride Refractive Index||2.00 +/-0.05 @ 632.8nm|
|Oxide Film Stress||-320MPa +/-50MPa (Compressive)|
|Nitride Film Stress||≥800 MPa (Tensile)|
|Wafer Thickness||Std. Thickness 525um|
|Oxide Temperature||900C° – 1050C°|
|Nitride Temperature||800C° – 850C°|