PRD1017 – 100mm Prime Silicon Wafers


Product ID: PRD1017
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-5 Ohm-cm
Thickness: 525 +/-25um
Front Side: Polished
Back Side: Etched

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SKU: PRD1017 Category:


Rogue Valley Microdevices is a leading silicon wafer supplier. We maintain a diverse inventory of high-quality test and prime silicon wafers.  This product consists of 100mm prime silicon wafers.  Please, see chart below for exact specifications.

 100mm Silicon Wafer Specifications

Wafer Grade: Prime Growth method: Cz
Dopant: Boron Orientation: <100> on +/- 0.5 degrees
Conductivity: P type Resistivity: 1-5 Ohm-cm
Diameter: 100mm +/-0.2 Thickness: 525 um +/-25
Warp: <40um TTV: <10 um
Primary flat location: <110> +/-5 degrees Primary flat length: 32.5mm +/-2.5
Secondary flat location: 90 degrees  +/- 5 Secondary flat length: 18mm +/- 2
Edge Profile: 20 degrees SEMI M1 Fronside: Polished (<2A)
Backside: Etched Package 2part vacuum cassette, 2 bags

Additional information