PRD1016 – 100mm Silicon Wafers 3,000A Low Stress LPCVD Nitride

$1,275.00

Product ID: PRD1016
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-30 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 3000A +/- 5% Low Stress LPCVD Nitride


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Our Low Stress Nitride can be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices. This Silicon Rich Film is excellent as a KOH Etch Mask.  All Silicon wafers have been thoroughly inspected and receive a pre-furnace clean prior to LPCVD Nitride deposition.  All orders are sent with a Certificate of Conformance containing wafer specifications and Nitride film thickness data.

 

100mm Silicon Wafers 3,000A Low Stress Nitride Parameters

Thickness2,950Å – 3,150Å
Thickness Tolerance+/-5%
Sides PressedBoth
Refractive Index2.20 +/-0.05 @ 632.8nm
Film Stress<250MPa +/-50MPa Tensile Stress
Wafer MaterialSilicon, Silicon on Insulator
Wafer ThicknessStd. Thickness
Temperature~820C°
GasesDichlorosilane, Ammonia
EquipmentHorizontal Furnace