Our Low Stress Nitride can be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices. This Silicon Rich Film is excellent as a KOH Etch Mask.
All Silicon wafers have been thoroughly inspected and receive a pre-furnace clean prior to LPCVD Nitride deposition. All orders are sent with a Certificate of Conformance containing wafer specifications and Nitride film thickness data.
100mm Silicon Wafers 3,000A Low Stress Nitride Parameters |
|
Thickness | 2,950Å – 3,150Å |
Thickness Tolerance | +/-5% |
Sides Pressed | Both |
Refractive Index | 2.20 +/-0.05 @ 632.8nm |
Film Stress | <250MPa +/-50MPa Tensile Stress |
Wafer Material | Silicon, Silicon on Insulator |
Wafer Thickness | Std. Thickness |
Temperature | ~820C° |
Gases | Dichlorosilane, Ammonia |
Equipment | Horizontal Furnace |