Dry Chlorinated Thermal Oxide w/FGA – 3,000Å
|Film Type||Dry Chlorinated Thermal Oxide & Forming Gas Anneal|
|Film Thickness||3,000A +/- 5%|
|Lot Size||25 wafers|
Product ID: PRD1006
|Substrate Thickness:||525 +/-25μm|
|Surface Condition:||Single Side Polished|
|Film Thickness:||3,000A +/- 5%|
|Film Type:||Dry Chlorinated Thermal Oxide & Forming Gas Anneal|
|Lot Size:||25 wafers|
This product consists of 25 pieces of silicon wafers with Dry Chlorinated Thermal Oxide w/FGA - 3,000A. FGA is Forming Gas Anneal; N2/H2 1hr @ 475C.
Dry Chlorinated Thermal Oxide is grown on a Silicon Wafer followed by a Forming Gas Anneal (FGA). Substrates are cleaned prior to processing in our class 100 cleanroom to ensure a premiμm quality film. This is a furnace process so both surfaces of the wafers will have oxide. Forming Gas Anneal Specifications; Hydrogen 4%/ Nitrogen 96% @ 450C for 1 hour. Product to ship with film Certificate of Conformance. Need something different? Please email firstname.lastname@example.org for a quote.
2 in stock
For Orders of more than four, please request a quote to receive a volume pricing discount.
All Sales are Final. RVM Terms and Conditions Apply Shipping PP&A. Lead Time 1 week.