Dry Chlorinated Thermal Oxide w/FGA – 3,000Å

Parameters

Film TypeDry Chlorinated Thermal Oxide & Forming Gas Anneal
Film Thickness3,000A +/- 5%
Lot Size25 wafers

Product ID: PRD1006

Material: Silicon
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: <1 ohm-cm
Substrate Thickness: 525 +/-25μm
Surface Condition: Single Side Polished
Flat/Notch: 2 Semi-std
Film Thickness: 3,000A +/- 5%
Film Type: Dry Chlorinated Thermal Oxide & Forming Gas Anneal
Lot Size: 25 wafers
This product consists of 25 pieces of silicon wafers with Dry Chlorinated Thermal Oxide w/FGA - 3,000A. FGA is Forming Gas Anneal; N2/H2 1hr @ 475C.
Dry Chlorinated Thermal Oxide is grown on a Silicon Wafer followed by a Forming Gas Anneal (FGA). Substrates are cleaned prior to processing in our class 100 cleanroom to ensure a premiμm quality film. This is a furnace process so both surfaces of the wafers will have oxide. Forming Gas Anneal Specifications; Hydrogen 4%/ Nitrogen 96% @ 450C for 1 hour. Product to ship with film Certificate of Conformance. Need something different? Please email sales@roguevalleymicro.com for a quote.
2 in stock
$2,120.75
per lot

For Orders of more than four, please request a quote to receive a volume pricing discount.

All Sales are Final. RVM Terms and Conditions Apply Shipping PP&A. Lead Time 1 week.