Dry Chlorinated Thermal Oxide w/FGA – 3,000Å
Parameters
| Film Type | Dry Chlorinated Thermal Oxide & Forming Gas Anneal |
| Film Thickness | 3,000A +/- 5% |
| Lot Size | 25 wafers |
Product ID: PRD1006
| Material: | Silicon |
| Diameter: | 100mm |
| Type/Dopant: | P/Boron |
| Orientation: | <100> |
| Resistivity: | <1 ohm-cm |
| Substrate Thickness: | 525 +/-25μm |
| Surface Condition: | Single Side Polished |
| Flat/Notch: | 2 Semi-std |
| Film Thickness: | 3,000A +/- 5% |
| Film Type: | Dry Chlorinated Thermal Oxide & Forming Gas Anneal |
| Lot Size: | 25 wafers |
This product consists of 25 pieces of silicon wafers with Dry Chlorinated Thermal Oxide w/FGA - 3,000A. FGA is Forming Gas Anneal; N2/H2 1hr @ 475C.
Dry Chlorinated Thermal Oxide is grown on a Silicon Wafer followed by a Forming Gas Anneal (FGA). Substrates are cleaned prior to processing in our class 100 cleanroom to ensure a premiμm quality film. This is a furnace process so both surfaces of the wafers will have oxide. Forming Gas Anneal Specifications; Hydrogen 4%/ Nitrogen 96% @ 450C for 1 hour. Product to ship with film Certificate of Conformance. Need something different? Please email sales@roguevalleymicro.com for a quote.
2 in stock
$2,237.75
per lotFor Orders of more than four, please request a quote to receive a volume pricing discount.
All Sales are Final. RVM Terms and Conditions Apply Shipping PP&A. Lead Time 1 week.
