100mm Silicon Wafers 10,000A Wet Thermal Oxide

$700.00

Product ID: PRD1011
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 10,000A +/- 5% Wet Thermal Oxide


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This product consist of 100mm silicon wafers with 1um of Wet Thermal Oxide.

Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices. Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive premium quality films that provide the consistency and repeatability needed make your project a success. All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.

 Wet Thermal Oxidation Parameters

Thickness 9,500Å – 10,500Å
Thickness Tolerance 10,000Å+/-5%
Sides Pressed Both
Refractive Index 1.456 +/-0.02 @ 632.8nm
Film Stress -320MPa +/-50MPa (Compressive)
Wafer Thickness Std. Thickness
Wafer Material Silicon
Temperature 900C° – 1050C°
Gasses Oxygen
Equipment Horizontal Furnace

Additional information

Diameter

Type/Dopant

Orientation

Resistivity

Surface

Film