This product consist of 100mm silicon wafers with 1um of Wet Thermal Oxide.
Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices. Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive premium quality films that provide the consistency and repeatability needed make your project a success. All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.
Wet Thermal Oxidation Parameters
|Thickness||9,500Å – 10,500Å|
|Refractive Index||1.456 +/-0.02 @ 632.8nm|
|Film Stress||-320MPa +/-50MPa (Compressive)|
|Wafer Thickness||Std. Thickness|
|Temperature||900C° – 1050C°|