100mm Silicon Wafers 1,000A Wet Thermal Oxide

$775.00

Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 0.003-0.005 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 1000A +/- 5% Wet Thermal Oxide
**1 Lot = 25 wafers


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This product consist of 100mm silicon wafers with 1,000A of Wet thermal Oxide.

Wet thermal Oxide on Low Resistivity Silicon has been a long time favorite for many customers.  Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive premium quality films that provide the consistency and repeatability needed make your project a success.  All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.

  Wet Thermal Oxidation Parameters

Thickness950Å – 1,050Å
Thickness Tolerance1,000Å +/-5%
Sides PressedBoth
Refractive Index1.456 +/-0.02 @ 632.8nm
Film Stress-320MPa +/-50MPa (Compressive)
Wafer ThicknessStd. Thickness
Wafer MaterialSilicon
Temperature900C° – 1050C°
GassesOxygen
EquipmentHorizontal Furnace