This product consist of 100mm silicon wafers with 3,000A Dry Chlorinated Thermal Oxide and Forming Gas Anneal.
Our Dry Chlorinated Thermal Oxidation is recommended for use in MOS and other active device fabrication processes. Using Dry Chlorinated Thermal Oxide can help your devices to perform to its highest potential by eliminating metal ions. The addition of a Forming Gas Anneal after oxidation is to passivate dangling bonds. Dangling bonds at the silicon interface can have an effect on the insulating properties of your oxide. All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.
Dry Chlorinated Thermal Oxidation Parameters | |
| Thickness | 2,850Å – 3,150Å |
| Thickness Tolerance | 3000Å+/-5% |
| Sides Processed | Both |
| Film Stress | -320MPa +/-50MPa (Compressive) |
| Wafer Thickness | Semi – Std. Thickness |
| Wafer Material | Silicon |
| Gases | Oxygen |
| Chemical Vapor | TransLC (Chlorine Source) |
| Equipment | Horizontal Furnace |
Forming Gas Anneal | |
| Sides Processed | Both |
| Wafer Thickness | Semi – Std. Thickness |
| Wafer Material | Silicon |
| Temperature | ~450C |
| Process Time | ~1 hour |
| Gases | Hydrogen 4%/ Nitrogen 96% |
| Equipment | Horizontal Furnace |
