2,000Å Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices. Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive the highest quality films. All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.
Wet Thermal Oxidation Parameters |
|
| Thickness | 1,900Å – 2,100Å |
| Thickness Tolerance | 2,000Å+/-5% |
| Sides Pressed | Both |
| Refractive Index | 1.456 +/-0.02 @ 632.8nm |
| Film Stress | -320MPa +/-50MPa (Compressive) |
| Wafer Thickness | Std. Thickness |
| Wafer Material | Silicon |
| Temperature | 900C° – 1050C° |
| Gasses | Oxygen |
| Equipment | Horizontal Furnace |
