Description
2,000Å Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices. Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive the highest quality films. All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.
100mm Silicon Wafers 2,000A Wet Thermal Oxidation Parameters |
|
Thickness | 1,900Å – 2,100Å |
Thickness Tolerance | 2,000Å+/-5% |
Sides Pressed | Both |
Refractive Index | 1.456 +/-0.02 @ 632.8nm |
Film Stress | -320MPa +/-50MPa (Compressive) |
Wafer Thickness | Std. Thickness |
Wafer Material | Silicon |
Temperature | 900C° – 1050C° |
Gasses | Oxygen |
Equipment | Horizontal Furnace |