PRD1005 – 100mm Silicon Wafers 3,000A Wet Thermal Oxide


Product ID: PRD1005
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: ≤.005 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 3000A +/- 5% Wet Thermal Oxide

All Sales are Final.  RVM Terms and Conditions Apply
Shipping PP&A.  Lead time 1 week

2 in stock (can be backordered)

SKU: PRD1005 Categories: ,


We have designed our Wet Thermal Oxidation process to ensure that you receive the highest quality films.  This product consists of low resistivity Silicon wafers coated with 3,000Å of our ultra-pure Wet thermal Oxide. All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.

  Wet Thermal Oxidation Parameters

Thickness 2,850Å – 3,150Å
Thickness Tolerance 3,000Å +/-5%
Sides Pressed Both
Refractive Index 1.456 +/-0.02 @ 632.8nm
Film Stress -320MPa +/-50MPa (Compressive)
Wafer Thickness Std. Thickness
Wafer Material Silicon
Temperature 900C° – 1050C°
Gasses Oxygen
Equipment Horizontal Furnace

Additional information