PRD1005 – 100mm Silicon Wafers 3,000A Wet Thermal Oxide

$1,405.75

Product ID: PRD1005
Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: ≤.005 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 3000A +/- 5% Wet Thermal Oxide


All Sales are Final.  RVM Terms and Conditions Apply
Shipping PP&A.  Lead time 1 week

2 in stock (can be backordered)

SKU: PRD1005 Categories: ,

Description

We have designed our Wet Thermal Oxidation process to ensure that you receive the highest quality films.  This product consists of low resistivity Silicon wafers coated with 3,000Å of our ultra-pure Wet thermal Oxide. All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.

  Wet Thermal Oxidation Parameters

Thickness 2,850Å – 3,150Å
Thickness Tolerance 3,000Å +/-5%
Sides Pressed Both
Refractive Index 1.456 +/-0.02 @ 632.8nm
Film Stress -320MPa +/-50MPa (Compressive)
Wafer Thickness Std. Thickness
Wafer Material Silicon
Temperature 900C° – 1050C°
Gasses Oxygen
Equipment Horizontal Furnace

Additional information

Diameter

Type/Dopant

Orientation

Resistivity

Surface

Film