Description
We have designed our Wet Thermal Oxidation process to ensure that you receive the highest quality films. This product consists of low resistivity Silicon wafers coated with 3,000Å of our ultra-pure Wet thermal Oxide. All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.
Wet Thermal Oxidation Parameters |
|
| Thickness | 2,850Å – 3,150Å |
| Thickness Tolerance | 3,000Å +/-5% |
| Sides Pressed | Both |
| Refractive Index | 1.456 +/-0.02 @ 632.8nm |
| Film Stress | -320MPa +/-50MPa (Compressive) |
| Wafer Thickness | Std. Thickness |
| Wafer Material | Silicon |
| Temperature | 900C° – 1050C° |
| Gasses | Oxygen |
| Equipment | Horizontal Furnace |
