40,000A Wet Thermal Oxide on 150mm Silicon Wafers (PRD1507)

$1,225.00

Substrate: Silicon Wafers
Diameter: 150mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 675 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 40,000A +/- 5% Wet Thermal Oxide


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We have designed our Wet Thermal Oxidation process to ensure that you receive the highest quality films.  This product consists of medium resistivity 150mm silicon wafers coated with 4um of our ultra-pure Wet thermal Oxide.   All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.

  Wet Thermal Oxidation Parameters

Thickness 3,8000Å – 42,000Å
Thickness Tolerance 40,000Å +/-5%
Sides Pressed Both
Refractive Index 1.456 +/-0.02 @ 632.8nm
Film Stress -320MPa +/-50MPa (Compressive)
Wafer Thickness Std. Thickness
Wafer Material Silicon
Temperature 900C° – 1050C°
Gasses Oxygen
Equipment Horizontal Furnace