Description
5,000A of Thermal Oxide on medium resistivity 150mm silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices. Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive the highest quality films. All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.
100mm Silicon Wafers 5,000A Wet Thermal Oxidation Parameters |
|
Thickness | 4,750Å – 5,250Å |
Thickness Tolerance | 5,000Å+/-5% |
Sides Pressed | Both |
Refractive Index | 1.456 +/-0.02 @ 632.8nm |
Film Stress | -320MPa +/-50MPa (Compressive) |
Wafer Thickness | Std. Thickness |
Wafer Material | Silicon |
Temperature | 900C° – 1050C° |
Gasses | Oxygen |
Equipment | Horizontal Furnace |