10,000A Wet Thermal Oxide on 150mm Silicon Wafers (PRD1501)

$975.00

Substrate: Silicon Wafers
Diameter: 150mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 675 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 10,000A +/- 5% Wet Thermal Oxide


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This product consist of 150mm silicon wafers with 1um of Wet thermal Oxide. Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices.  Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive premium quality films that provide the consistency and repeatability needed make your project a success.  All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.

  Wet Thermal Oxidation Parameters

Thickness 9,500Å – 10,500Å
Thickness Tolerance 10,000Å+/-5%
Sides Pressed Both
Refractive Index 1.456 +/-0.02 @ 632.8nm
Film Stress -320MPa +/-50MPa (Compressive)
Wafer Thickness Std. Thickness
Wafer Material Silicon
Temperature 900C° – 1050C°
Gasses Oxygen
Equipment Horizontal Furnace