Our Stoichiometric LPCVD Nitride film has many uses and is often used as a tool for defining active regions during field oxidation. If planning to use nitride as a KOH mask for through wafer etching, our Low Stress Nitride or Oxide/Nitride Film may yield the best results. All silicon wafers have been thoroughly inspected and receive a pre-furnace clean prior to LPCVD Nitride deposition. All orders are sent with a Certificate of Conformance containing wafer specifications and Nitride film thickness data.
Stoichiometrice LPCVD Nitride Parameters
|Thickness||1,900Å – 2,100Å|
|Thickness Tolerance||2,000Å +/-5%|
|Refractive Index||2.00 +/-0.05 @ 632.8nm|
|Film Stress||=>800MPa +/-50MPa Tensile Stress|
|Wafer Material||Silicon, Silicon on Insulator|
|Wafer Thickness||Std. Thickness|