150mm Silicon Wafers 2,000A Stoichiometric LPCVD Nitride

$1,050.00

Substrate: Silicon Wafers
Diameter: 150mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 675 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 2000A +/- 5% Stoichiometric LPCVD Nitride


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Our Stoichiometric LPCVD Nitride film has many uses and is often used as a tool for defining active regions during field oxidation. If planning to use nitride as a KOH mask for through wafer etching, our Low Stress Nitride or Oxide/Nitride Film may yield the best results. All Silicon wafers have been thoroughly inspected and receive a pre-furnace clean prior to LPCVD Nitride deposition.  All orders are sent with a Certificate of Conformance containing wafer specifications and Nitride film thickness data.

Stoichiometrice LPCVD Nitride Parameters

Thickness1,900Å – 2,100Å
Thickness Tolerance2,000Å +/-5%
Sides PressedBoth
Refractive Index2.00 +/-0.05 @ 632.8nm
Film Stress=>800MPa +/-50MPa Tensile Stress
Wafer MaterialSilicon, Silicon on Insulator
Wafer ThicknessStd. Thickness
Temperature~800C°
GasesDichlorosilane, Ammonia
EquipmentHorizontal Furnace