Description
Our Stoichiometric LPCVD Nitride film has many uses and is often used as a tool for defining active regions during field oxidation. If planning to use nitride as a KOH mask for through wafer etching, our Low Stress Nitride or Oxide/Nitride Film may yield the best results. All silicon wafers have been thoroughly inspected and receive a pre-furnace clean prior to LPCVD Nitride deposition. All orders are sent with a Certificate of Conformance containing wafer specifications and Nitride film thickness data.
Stoichiometrice LPCVD Nitride Parameters |
|
| Thickness | 1,900Å – 2,100Å |
| Thickness Tolerance | 2,000Å +/-5% |
| Sides Pressed | Both |
| Refractive Index | 2.00 +/-0.05 @ 632.8nm |
| Film Stress | =>800MPa +/-50MPa Tensile Stress |
| Wafer Material | Silicon, Silicon on Insulator |
| Wafer Thickness | Std. Thickness |
| Temperature | ~800C° |
| Gases | Dichlorosilane, Ammonia |
| Equipment | Horizontal Furnace |
