2,000A Stoichiometric LPCVD Nitride on 150mm Silicon Wafers (PRD1500)

$1,050.00

Substrate: Silicon Wafers
Diameter: 150mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1-20 Ohm-cm
Thickness: 675 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 2000A +/- 5% Stoichiometric LPCVD Nitride


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Our Stoichiometric LPCVD Nitride film has many uses and is often used as a tool for defining active regions during field oxidation. If planning to use nitride as a KOH mask for through wafer etching, our Low Stress Nitride or Oxide/Nitride Film may yield the best results. All Silicon wafers have been thoroughly inspected and receive a pre-furnace clean prior to LPCVD Nitride deposition.  All orders are sent with a Certificate of Conformance containing wafer specifications and Nitride film thickness data.

Stoichiometrice LPCVD Nitride Parameters

Thickness 1,900Å – 2,100Å
Thickness Tolerance 2,000Å +/-5%
Sides Pressed Both
Refractive Index 2.00 +/-0.05 @ 632.8nm
Film Stress =>800MPa +/-50MPa Tensile Stress
Wafer Material Silicon, Silicon on Insulator
Wafer Thickness Std. Thickness
Temperature ~800C°
Gases Dichlorosilane, Ammonia
Equipment Horizontal Furnace