6,000A Low Stress LPCVD Nitride on 100mm Silicon wafers (PRD1007)


Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 10-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 6000A +/- 5% Low Stress LPCVD Nitride

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Our Low Stress Nitride can be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices. This Silicon Rich Film is excellent as a KOH Etch Mask.  All Silicon wafers have been thoroughly inspected and receive a pre-furnace clean prior to LPCVD Nitride deposition.  All orders are sent with a Certificate of Conformance containing wafer specifications and Nitride film thickness data.

  Low Stress Nitride Parameters

Thickness 5,700Å – 6,300Å
Thickness Tolerance +/-5%
Sides Pressed Both
Refractive Index 2.20 +/-0.05 @ 632.8nm
Film Stress <250MPa +/-50MPa Tensile Stress
Wafer Material Silicon, Silicon on Insulator
Wafer Thickness Std. Thickness
Temperature ~820C°
Gases Dichlorosilane, Ammonia
Equipment Horizontal Furnace