100mm Silicon Wafers 6,000A Low Stress LPCVD Nitride


Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 10-20 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 6000A +/- 5% Low Stress LPCVD Nitride

Free Shipping in U.S 2nd day air for orders above $500.00
Buy now, get in 2 days

Available on backorder

Our Low Stress Nitride can be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices. This Silicon Rich Film is excellent as a KOH Etch Mask.  All Silicon wafers have been thoroughly inspected and receive a pre-furnace clean prior to LPCVD Nitride deposition.  All orders are sent with a Certificate of Conformance containing wafer specifications and Nitride film thickness data.

  Low Stress Nitride Parameters

Thickness5,700Å – 6,300Å
Thickness Tolerance+/-5%
Sides PressedBoth
Refractive Index2.20 +/-0.05 @ 632.8nm
Film Stress<250MPa +/-50MPa Tensile Stress
Wafer MaterialSilicon, Silicon on Insulator
Wafer ThicknessStd. Thickness
GasesDichlorosilane, Ammonia
EquipmentHorizontal Furnace