Our Low Stress Nitride can be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices. This Silicon Rich Film is excellent as a KOH Etch Mask. All Silicon wafers have been thoroughly inspected and receive a pre-furnace clean prior to LPCVD Nitride deposition. All orders are sent with a Certificate of Conformance containing wafer specifications and Nitride film thickness data.
Low Stress Nitride Parameters |
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| Thickness | 5,700Å – 6,300Å |
| Thickness Tolerance | +/-5% |
| Sides Pressed | Both |
| Refractive Index | 2.20 +/-0.05 @ 632.8nm |
| Film Stress | <250MPa +/-50MPa Tensile Stress |
| Wafer Material | Silicon, Silicon on Insulator |
| Wafer Thickness | Std. Thickness |
| Temperature | ~820C° |
| Gases | Dichlorosilane, Ammonia |
| Equipment | Horizontal Furnace |