3,000Å Dry Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices. Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive the highest quality films. All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.
Dry Thermal Oxidation Parameters
|Thickness||2,850Å – 3000Å|
|Refractive Index||1.456 +/-0.02 @ 632.8nm|
|Film Stress||-320MPa +/-50MPa (Compressive)|
|Wafer Thickness||Std. Thickness|
|Temperature||900C° – 1050C°|