3,000A Dry Thermal Oxide on 100mm Wafers (PRD1003)

$950.00

Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: 1- 30 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 3000A +/- 5% Dry Thermal Oxide


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3,000Å Dry Thermal Oxide on medium resistivity silicon wafers has long been considered a common starting material for a variety of MEMS and Sensor Devices.  Our ultra-pure Wet Thermal Oxidation process is designed to ensure that you receive the highest quality films. All orders are sent with a Certificate of Conformance containing wafer specifications and Thermal Oxide film thickness data.

  Dry Thermal Oxidation Parameters

Thickness 2,850Å – 3000Å
Thickness Tolerance 3000Å+/-5%
Sides Pressed Both
Refractive Index 1.456 +/-0.02 @ 632.8nm
Film Stress -320MPa +/-50MPa (Compressive)
Wafer Thickness Std. Thickness
Wafer Material Silicon
Temperature 900C° – 1050C°
Gasses Oxygen
Equipment Horizontal Furnace