76mm (3″) Silicon Wafer, P/B, <1-0-0>,<0.005 (PRD7600)


Substrate: Silicon Wafers
Diameter: 76mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: <0.005 Ohm-cm
Thickness: 381 +/-25um
Front Side: Polished
Back Side: Etched

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Rogue Valley Microdevices is a leading silicon wafer supplier. We maintains a diverse inventory of high-quality test and prime silicon wafers.  This product consist of 76mm prime silicon wafers.  Please see chart below for exact specifications.

  Silicon Wafer Specifications

Wafer Grade: Prime Growth method: Cz
Dopant: Boron Orientation: <100> on +/- 0.5 degrees
Conductivity: P type Resistivity: <0.005 Ohm-cm
Diameter: 76.2mm +/-0.2 Thickness: 381 um +/-25
Warp: <30um TTV: <10 um
Primary flat location: <110> +/-5 degrees Primary flat length: 22.5mm +/-2.5
Secondary flat location: 90 degrees  +/- 5 Secondary flat length: 11.2mm +/- 1.5
Edge Profile: 20 degrees SEMI M1 Fronside: Polished (<2A)
Backside: Etched Package 2part vacuum cassette, 2 bags