This product consist of 50.8mm silicon wafers with 3,000A of Stoichiometric LPCVD Nitride.
Our Stoichiometric LPCVD Nitride can be a very effective insulator and works great as a KOH etch mask when deposited over thermal oxide. This versatile film can be used for building MEMS devices or as a tool for defining active regions during field oxidation. As with all of our films, we have worked hard to develop a stable and consistent Stoichiometric LPCVD Nitride process that can be used for many applications.
Stoichiometric LPCVD Nitride Parameters
|Thickness||2,850Å – 3,050Å|
|Thickness Tolerance||3,000Å +/-5%|
|Refractive Index||2.00 +/-.05 @632nm|
|Film Stress||>800MPa Tensile Stress|
|Wafer Thickness||Std. Thickness|
|Equipment||Horizontal Vacuum Furnace|