Description
This product consist of 100mm silicon wafers with 3,000A of Stoichiometric LPCVD Nitride.
Our Stoichiometric LPCVD Nitride can be a very effective insulator and works great as a KOH etch mask when deposited over thermal oxide. This versatile film can be used for building MEMS devices or as a tool for defining active regions during field oxidation. As with all of our films, we have worked hard to develop a stable and consistent Stoichiometric LPCVD Nitride process that can be used for many applications.
Stoichiometric LPCVD Nitride Parameters |
|
| Thickness | 2,850Å – 3,150Å |
| Thickness Tolerance | 3,000Å +/-5% |
| Sides Pressed | Both |
| Refractive Index | 2.00 +/-.05 @632nm |
| Film Stress | >800MPa Tensile Stress |
| Wafer Thickness | Std. Thickness |
| Wafer Material | Silicon |
| Temperature | 800C° |
| Gasses | Dichlorosilane, Ammonia |
| Equipment | Horizontal Vacuum Furnace |
