Substrate: Silicon Wafers
Diameter: 100mm
Type/Dopant: P/Boron
Orientation: <100>
Resistivity: .003 – .005 Ohm-cm
Thickness: 525 +/- 25um
Front Side: Polished
Back Side: Etched
Film: 3000A +/- 5% Dry Chlorinated Thermal Oxide with Forming Gas Anneal
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